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dc.contributor.advisorPradyumnan, P. P.
dc.contributor.authorMuhammed Sabeer N.A.
dc.contributor.otherUniversity of Calicut. Department of Physics.en_US
dc.date.accessioned2021-11-01T07:19:08Z
dc.date.available2021-11-01T07:19:08Z
dc.date.issued2020-09
dc.identifier.citationMuhammed Sabeer N.A. "Thermoelectric properties of nitride and oxide thin films for device applications." Thesis. Department of Physics, University of Calicut, 2020.en_US
dc.identifier.urihttps://hdl.handle.net/20.500.12818/108
dc.descriptionThesis (Ph. D.)--University of Calicut, Dept. of Physics , 2020.en_US
dc.descriptionThis electronic version was submitted by the student author. The certified thesis is available in the university library.en_US
dc.descriptionIncludes bibliographical references.en_US
dc.descriptionCataloged from PDF version of thesis.en_US
dc.description.statementofresponsibilityby Muhammed Sabeer N.A.en_US
dc.description.tableofcontents1. Thermoelectrics --2. Thin film deposition and characterization techniques -- 3. Enhancement of thermoelectric properties of tin nitride thin films by and convergence --4. Effect of point defect induced resonant levels on thermoelectric properties of zinc tin nitride thin films -- 5. Augmentation of p type conductivity of chromium nitride thin films for device applications -- 6. Nanocrystalline nio thin films: a p type thermoelectric material with wide bandgap -- 7. Thin film thermoelectric generators .en_US
dc.format.extent147 pagesen_US
dc.language.isoenen_US
dc.publisherUniversity of Calicut.en_US
dc.subjectPhysicsen_US
dc.subjectEnergy conversionen_US
dc.subjectThermoelectricityen_US
dc.subjectThin filmsen_US
dc.titleThermoelectric properties of nitride and oxide thin films for device applicationsen_US
dc.typeThesisen_US
dc.description.degreePh.D.en_US


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